1. Velocity saturation effects in n-channel deep-depletion SOS ...
Aug 5, 2005 ... We use the n-channel deep-depletion SOS/MOSFET to measure carrier velocity of electrons in thin SOS films. The data are presented as a ...
01479592?arnumber=1479592 | 
ieeexplore.ieee.org
2. IEEE Xplore - A Model for the Submicrometer N-Channel Deep ...
We present a model which accurately predicts current characteristics of ...
01051447?arnumber=1051447 | ieeexplore.ieee.org
3. MOSFETS - Basics
The basic principle of the MOSFET is that the source-to-drain current ..... In the deep depletion mode, the depletion layer can be ...
1%20MOSFET-1%20Basics | www.ecse.rpi.edu
4. DRAIN-CURRENT transients in SOI MOSFETs are com - Pseudo-MOSFET ...
Sep 2, 2009 ... Abstract—The pseudo-MOSFET drain-current transient time is .... deep depletion and the drain current transient is essentially ...
128.%20EDL%20Sept.%2009%20SOI%20Transients | schroder.personal.asu.edu
5. BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron ...
BSIMPD: A Partial-Depletion SOI MOSFET Model for Deep-Submicron CMOS Designs. Pin Su, Samuel K. H. Fung*, Stephen Tang, Fariborz Assaderaghi* and Chenming ...
HuC_CNF_003 | www.eecs.berkeley.edu
6. CCIS 2 - Determination of Charge Handling Capability of a Deep ...
depletion depth of a BC CCD [2] and to analyze the potential and charge distributions of a deep depletion mode MOSFET mounted on CCD sensing output ...
h1647227170185u0 | www.springerlink.com
7. A technique for the observation of interface trap densities in ...
MOSFET structure connected together), with respect to the substrate. the bias Vl ,,l,,, ... ring capacitor in deep depletion, showing the location ...
0268-1242_3_1_006 | iopscience.iop.org
8. Mosfet Modeling for VLSI Simulation Theory and Practice (629 pages)
4.3.3 Deep Depletion C-V Plot 155. 4.4 Deviation from Ideal C-V Curves 156 ... 9.14 Measurement of MOSFET Source/Drain Diode Junction. 484. Parameters 489 ...
6157_toc | www.worldscibooks.com
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